Write the truth table for the circuit shown in Fig.14.11. Name the gate that the circuit resembles.

(a) A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.

(b) Give the truth table and circuit symbol for NAND gate.

(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.

(ii) Draw the circuit diagram of a half wave rectifier and explain its working.

Write the two processes that take place in the formation of a p-n junction. Explain with the help of a diagram, the formation of depletion region and barrier potential in a p-n junction.

Name the junction diode whose I-V characteristics are drawn below:

Using a suitable combination from a NOR, an OR and a NOT gate, draw circuits to obtain the truth tables given below:

(i)

(ii)

What do the terms ‘depletion region’ and ‘barrier potential’ mean for a p-n junction?

Consider a box with three terminals on top of it as shown in Fig.14.18 (a):

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement.

A student performs an experiment in which any two of these three terminals are connected in the circuit shown in Fig. 14.18 (b).

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit.

The graphs are

(i) when A is positive and B is negative

(ii) when A is negative and B is positive

(iii) When B is negative and C is positive

(iv) When B is positive and C is negative

(v) When A is positive and C is negative

(vi) When A is negative and C is positive

From these graphs of current – voltage characteristic shown in Fig. 14.18 (c) to (h), determine the arrangement of components between A, B and C.