Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
When a pure semiconductor is mixed with a small amount of impurities i.e. elements having number of valence electrons slightly different, the concentration of charge carries changes dramatically. So to increase the number of a particular type of charge carriers the Silicon and Germanium crystals that are elements of group XIV, are doped with a small amount of the elements of groups XIII or XV.
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The band gap for silicon is 1.1 eV.
(a) Find the ratio of the band gap to kT for silicon at room temperature 300 K.
(b) At what temperature does this ratio become one tenth of the value of 300 K? (Silicon will not retain its structure at these high temperatures)
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